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专利名称：Silicon-on-insulator (SOI) semiconductor
structure
发明人：Chittipeddi, Sailesh,Kelly, Michael J.申请号：EP01114983.8申请日：20010620公开号：EP1170786B1公开日：20190619
摘要：A semiconductor device comprising a silicon-on-insulator (SOI) substrateincluding a base substrate, an insulator layer, and a silicon layer, and a trench capacitorincluding at least one trench formed in the silicon-on-insulator substrate and extendingthrough the base substrate, the insulator layer and the silicon layer, wherein the at leastone trench includes at least one layer of silicon dioxide formed therein. In a preferredembodiment, semiconductor material disposed in the at least one trench forms a firstelectrode of a semiconductor capacitor, and semiconductor material of the SOI substratewhich lies adjacent to the at least one trench forms a second electrode of the capacitor.
申请人：AVAGO TECHNOLOGIES GENERAL IP
地址：SG
国籍：SG
代理机构：Dilg, Andreas
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