STC03DE170HYBRID EMITTER SWITCHED BIPOLAR TRANSISTORESBT™ 1700 V - 3 A - 0.55 WTable 1: General Features
VCS(ON)1 V
IC1.8 A
RCS(ON)0.55 W
Figure 1: Package )s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbOnnnn
LOW EQUIVALENT ON RESISTANCE
VERY FAST-SWITCH, UP TO 150 kHzSQUARED RBSOA, UP TO 1700 V
VERY LOW CISS DRIVEN BY RG = 4.7 W
APPLICATIONnAUX SMPS FOR THREE PHASE MAINS
1234DESCRIPTION
The STC03DE170 is manufactured in a hybridstructure, using dedicated high voltage Bipolarand low voltage MOSFET technologies, aimed toproviding the best performance in ESBT topology.The STC03DE170 is designed for use in auxflyback smps for any three phase application.
TO247-4LFigure 2: Internal Schematic Diagram Electrical Symbol Device StructureTable 2: Order Code
Part NumberSTC03DE170MarkingPackagePackagingTUBESTC03DE170TO247-4LOctober 2004
Rev. 21/9
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STC03DE170
Table 3: Absolute Maximum Ratings
SymbolVCS(SS)VBS(OS)VSB(OS)VGSICICMIBIBMPtotTJ
Parameter
Collector-Source Voltage (VBS = VGS = 0 V)Base-Source Voltage (IC= 0, VGS = 0 V)Source-Base Voltage (IC= 0, VGS = 0 V)Gate-Source VoltageCollector Current
Collector Peak Current (tp < 5ms)Base Current
Base Peak Current (tp < 1ms)Storage Temperature Total Dissipation at TC = 25 oC
Value1700309± 203624100
UnitVVVVAAAAW
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbOTstg
-65 to 125125
°C
Max. Operating Junction Temperature
°C
Table 4: Thermal Data
SymbolRthj-case
ParameterUnitC/W
Thermal Resistance Junction-Case Max1
o
Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
SymbolICS(SS)
Parameter
Test Conditions
Min.
Collector-Source Current
(VBS = VGS = 0 V)Base-Source Current(IC = 0 , VGS = 0 V)(IC = 0 , VGS = 0 V)
VCS(SS) = 1700 VVBS(OS) = 30 VVSB(OS) = 9 V
Typ.Max.10010
UnitmA
IBS(OS)
mAmAnAVV
ISB(OS)
Source-Base Current100
IGS(OS)Gate-Source LeakageVGS = ± 20 V
5001.51.3
VCS(ON)Collector-Source ON
VoltagehFE
DC Current Gain
VGS = 10 V IC = 1.8 A IB = 0.36 A
11
VGS = 10 V IC = 0.7 A IB = 70 mA
IC = 1.8 A VCS = 1 V VGS = 10 V
3.56
5
IC = 0.7 A VCS = 1 V VGS = 10 V
101
VBS(ON)Base-Source ON VoltageVGS(th)Ciss
Gate Threshold VoltageInput Capacitance
VGS = 10 V IC = 1.8 A IB = 0.36 A
1.213
VV
VGS = 10 V IC = 0.7 A IB = 70 mA
0.8
VBS = VGS IB = 250 mAVGS = VCB = 0
1.52.2V
VCS = 25 V f = 1MHZ VCS = 15 V VGS = 10 VVCB = 0 IC = 1.8 A VGS = 10 V
750pF
QGS(tot)Gate-Source Charge
INDUCTIVE LOADtstf
Storage TimeFall Time
12.5nC
RG = 47 W VClamp = 1200 Vtp = 4 ms IC = 1.8 A IB = 0.36 A
76014
nsns
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STC03DE170
SymboltstfVCSW
Parameter
INDUCTIVE LOADStorage TimeFall Time
VGS = 10 V
RG = 47 W VClamp = 1200 Vtp = 4 ms IC = 0.7 A IB = 70 mA
1500
3.969032
nsnsVV
Test Conditions
Min.
Typ.
Max.
Unit
Maximum Collector-Source RG = 47 W hFE = 5 A IC = 3 AVoltage without Snubber
VCS(dyn)Collector-Source Dynamic VCC = VClamp = 400 V VGS = 10 V
Voltage
RG = 47 W IC = 0.5 A
(500 ns)
IB = 0.1 A IBpeak = 1 A
tpeak = 500 ns
VCS(dyn)Collector-Source Dynamic VCC = VClamp = 400 V VGS = 10 V
Voltage
RG = 47 W IC = 0.5 A
(1ms)
IB = 0.1 A IBpeak = 1 A
tpeak = 500 ns
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbO2.2
V
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STC03DE170
Figure 3: Safe Operating Area
Figure 6: Output Characteristics
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbOFigure 4: Reverse Biased Safe Operating AreaFigure 5: DC Current Gain
Figure 8: DC Current Gain
Figure 7: Gate Threshold Voltage vs Tempera-ture
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STC03DE170
Figure 9: Collector-Source On Voltage
Figure 12: Collector-Source On Voltage
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbOFigure 10: Base-Source On Voltage
Figure 13: Base-Source On Voltage
Figure 11: Inductive Load Switching Time
Figure 14: Inductive Load Switching Time
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STC03DE170
Figure 15: Dynamic Collector-Emitter Satura-tion Voltage
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbOFigure 16: Inductive Load Enlargement FBSOA Circuit Table 6: Components, Values
VB1 = 4.16 VR1 = 1 W
C1 = 220 nFC2 ≤ 70 pFC3 = 50 nFVg = 10 V
D1 = BA157R2 = 100 WR3 = VCC / I Cn
Pulse Time = 5 ms
Rg = 47 W
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STC03DE170TO247-4L MECHANICAL DATADIM.MIN.AA1bb1b2cDEe4.852.200.951.302.500.401.10mmTYP.MAX.5.152.601.301.702.900.80)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbO19.8520.1515.4515.752.54e1LL1L25.0814.203.7014.804.3018.50ØP3.553.655.50ØRS4.505.507536918A7/9
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STC03DE170
Table 7: Revision History
Date13-Sep-200404-Oct-2004
Release
12
Change Designator
First Release.
Figure 15 has been updated on page 6.
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbO8/9
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STC03DE170
)s(tcud o)rs(Pt cetuedloorsPb eOt -e l)os(stbcuO d- o)rsP( tcetueldoorsPb Oe t el o sbOThe ST logo is a registered trademark of STMicroelectronicsAll other names are the property of their respective owners© 2004 STMicroelectronics - All Rights ReservedSTMicroelectronics group of companiesInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is grantedby implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subjectto change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are notauthorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of Americawww.st.com9/9
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